Published October 1999
| Version v1
Journal article
Magnetoresistance and de Haas-van Alphen effect in UB4
Creators
- 1. Advanced Science Research Center, Japan Atomic Energy Research Institute, Tokai, Ibaraki (Japan)
Description
We grew a single crystal of UB4 with the tetragonal structure and carried out the magnetoresistance and de Haas-van Alphen (dHvA) experiments. The magnetoresistance data indicate that UB4, which is a compensated metal with equal carrier numbers of electrons and holes, most likely has open orbits along the [100] and [010] directions. We detected about eleven dHvA branches. The cyclotron masses are moderately heavy, ranging from 3.0 to 14.1 m0, reflecting the electronic specific heat coefficient of 24.9 mJ/K2·mol. (author)
Additional details
Publishing Information
- Journal Title
- Journal of the Physical Society of Japan
- Journal Volume
- 68
- Journal Issue
- 10
- Journal Page Range
- p. 3347-3351
- ISSN
- 0031-9015
INIS
- Country of Publication
- Japan
- Country of Input or Organization
- Japan
- INIS RN
- 30056790
- Subject category
- S36: MATERIALS SCIENCE;
- Descriptors DEI
- CRYSTAL GROWTH; DE HAAS-VAN ALPHEN EFFECT; FERMI LEVEL; INTERMETALLIC COMPOUNDS; MAGNETORESISTANCE; MONOCRYSTALS; SPECIFIC HEAT; TEMPERATURE DEPENDENCE; TETRAGONAL LATTICES; URANIUM BORIDES
- Descriptors DEC
- ACTINIDE COMPOUNDS; ALLOYS; BORIDES; BORON COMPOUNDS; CRYSTAL LATTICES; CRYSTAL STRUCTURE; CRYSTALS; ELECTRIC CONDUCTIVITY; ELECTRICAL PROPERTIES; ENERGY LEVELS; PHYSICAL PROPERTIES; THERMODYNAMIC PROPERTIES; URANIUM COMPOUNDS