Transparent conducting ZnO:Ga films prepared on PEN substrates by using RF magnetron sputtering

The use of transparent conducting oxide films on polymer substrates has increased, as these substrates are suitable for flexible displays and optoelectronics. In this research, we studied the effects of O2 plasma pretreatment on the properties of Ga-doped zinc- oxide (GZO) films on PEN substrates. The films were fabricated using the RF magnetron sputtering process. To improve the surface adhesion and the electrical properties, the O2 plasma pretreatment process prior to GZO sputtering. With the appropriate O2 plasma treatment, the resistivity of the GZO films on the PEN substrates was 1.5 x 10-3 ohm-cm. The transmittance of the films on the substrates at a wavelength of 550 nm was about 90%.