Dopant activation in Sb-implanted relaxed Si1-xGex alloy layers grown on compositionally graded buffers
- 1. Aarhus Univ. (Denmark). Inst. for Fysik og Astronomi
- 2. Surrey Univ., Guildford (United Kingdom). Dept. of Electronic and Electrical Engineering
Description
Supersaturated solid solutions of substitutional, electrically active Sb have been obtained by ion implantation of relaxed epitaxial Si1-xGex alloy layers grown on compositionally graded buffers. Substitutional and non-substitutional Sb fractions in relaxed Si0.85Ge0.15, Si0.65Ge0.35 and Si0.50Ge0.50 alloy layers implanted to a dose of 5 x 1015 Sb cm-2 and annealed isothermally at temperatures ranging from 400 to 850 C have been studied by Rutherford backscattering/channeling, transmission electron microscopy and Hall-effect and sheet resistivity measurements. A supersaturated solution of Sb corresponding to a peak carrier concentration of 4 x 1020 cm-3 and an electrically active fraction of 40% of the implanted dose is observed by Hall measurements for the case of Si0.85Ge0.15 and Si0.65Ge0.35 alloys annealed at 550 C. (orig.)
Additional details
Publishing Information
- Journal Title
- Applied Physics. A, Materials Science and Processing
- Journal Volume
- 61
- Journal Issue
- 6
- Journal Page Range
- p. 579-585.
- ISSN
- 0947-8396
INIS
- Country of Publication
- Germany
- Country of Input or Organization
- Germany
- INIS RN
- 27013306
- Subject category
- S36: MATERIALS SCIENCE;
- Descriptors DEI
- ANNEALING; ANTIMONY ADDITIONS; CARRIER DENSITY; GERMANIUM ALLOYS; HALL EFFECT; ION IMPLANTATION; SILICON ALLOYS; SOLID SOLUTIONS; TRANSMISSION ELECTRON MICROSCOPY
- Descriptors DEC
- ALLOYS; DISPERSIONS; ELECTRON MICROSCOPY; HEAT TREATMENTS; HOMOGENEOUS MIXTURES; MICROSCOPY; MIXTURES; SOLUTIONS