Published March 1992 | Version v1
Journal article

Direct laser synthesis of thin silicon and germanium nitride/oxynitride layers

  • 1. Inst. of Atomic Physics, Bucharest (Romania)
  • 2. Dept. of Physics, Univ. of Lecce (Italy)
  • 3. Dept. of Materials Science, Univ. of Lecce (Italy)

Description

α-Si3N4 layers have been directly grown on a silicon surface as an effect of excimer (XeCl*) laser irradiation of silicon wafers in a NH3 atmosphere. The chemical composition corresponded to a mixture of polycrystalline silicon and pure Si3N4. By laser irradiation of germanium samples or of silicon samples in N2 atmosphere, only a thin oxynitride layer with low N concentration is obtained. (orig.)

Additional details

Publishing Information

Journal Title
Nuclear Instruments and Methods in Physics Research. Section B
Journal Volume
65
Journal Issue
1-4
Series
Nucl. Instrum. Methods Phys. Res., Sect. B.
Journal Page Range
115-118
ISSN
0168-583X
CODEN
NIMBE

Conference

Title
6. conference on radiation effects in insulators.
Dates
24-28 Jun 1991.
Place
Weimar (Germany).