Published October 1992
| Version v1
Journal article
Generation of the EL2 defect in n-GaAs irradiated by high energy protons
- 1. AN SSSR, Leningrad (Russian Federation). Fiziko-Tekhnicheskij Inst.
Description
This paper presents the results of the DLTS study of irradiation-induced defects in n-GaAs irradiated by 6.7 MeV protons at T = 300 K. It has been found that the irradiation produces the EL2 defect showing the persistent photoquenching (PPQ) effect. With increasing irradiation dose Φp ≥ 1 x 1011 cm-2 the concentration of irradiation-induced defects grows and their interaction becomes stronger. This changes the electrical properties of the EL2 defect: the thermal activation energy and the charge carrier cross section change. The experimental data permit the EL2 to be identified as the isolated antisite defect AsGa. (Author)
Additional details
Publishing Information
- Journal Title
- Semiconductor Science and Technology
- Journal Volume
- 7
- Journal Issue
- 10
- Journal Page Range
- p. 1237-1240.
- ISSN
- 0268-1242
- CODEN
- SSTEET
INIS
- Country of Publication
- United Kingdom
- Country of Input or Organization
- United Kingdom
- INIS RN
- 24014433
- Subject category
- S36: MATERIALS SCIENCE;
- Descriptors DEI
- ACTIVATION ENERGY; ATOMIC DISPLACEMENTS; CARRIER DENSITY; DOSE RATES; GALLIUM ARSENIDES; MEV RANGE 01-10; N-TYPE CONDUCTORS; POINT DEFECTS; PROTON BEAMS; QUENCHING; TEMPERATURE RANGE 0273-0400 K
- Descriptors DEC
- ARSENIC COMPOUNDS; ARSENIDES; BEAMS; CRYSTAL DEFECTS; CRYSTAL STRUCTURE; ENERGY; ENERGY RANGE; GALLIUM COMPOUNDS; HEAT TREATMENTS; MATERIALS; MEV RANGE; NUCLEON BEAMS; PARTICLE BEAMS; PHYSICAL RADIATION EFFECTS; PNICTIDES; RADIATION EFFECTS; SEMICONDUCTOR MATERIALS; TEMPERATURE RANGE