Metallization of chalkogenide melts and its relationship with vitrification

Semiconductor - metal transition in chalkogenide vitrificating melts was investigated by measuring the electric conductivity, the thermo-e.m.f., the Hall effect, the nmr as well as the magnetic susceptibility, density and viscosity. It is shown, that the chalkogenide melt covalent link net destruction, conditioning the transition from semiconductor to metallic conductivity, can be described from the uniform viewpoint both in case of high-resistance and low-resistance melts. Chalkogenide melt metallization limits the vitrification area in component concentration and in the structural transition temperature. Application of high rates of cooling from different melt temperatures, in which the transition semiconductor - metal takes place with the temperature increase, will make it possible to produce the same material both in the form of semiconductor glass and in the form of amorphous metal