The crystallization and physical properties of Al-doped ZnO nanoparticles
- 1. Institute of Microelectronics and Department of Electrical Engineering, Center for Micro/Nano Science and Engineering, National Cheng Kung University, Tainan 701, Taiwan (China)
- 2. Institute of Mechanical and Electromechanical Engineering, National Formosa University, Yunlin 632, Taiwan (China)
- 3. Institute of Nanotechnology and Microsystems Engineering, Center for Micro/Nano Science and Engineering, National Cheng Kung University, Tainan 701, Taiwan (China)
- 4. Department of Materials Science and Engineering, National Cheng Kung University, Tainan 701, Taiwan (China)
Description
Un-doped Al (0-9 at.%) nanoparticles and doped ZnO powders were prepared by the sol-gel method. The nanoparticles were heated at 700-800 deg. C for 1 h in air and then analyzed by X-ray diffraction (XRD), scanning electron microscopy (SEM), Raman spectra and photoluminescence (PL). The results of un-doped (ZnO) and Al-doped ZnO (AZO) nanoparticles were also compared to investigate the structural characteristics and physical properties. XRD patterns of AZO powders were similar to those of ZnO powders, indicating that micro-Al ions were substituted for Zn atoms and there were no variations in the structure of the ZnO nanoparticles. From the XRD and SEM data, the grain size of the AZO nanoparticles increased from 34.41 to 40.14 nm when the annealing temperature was increased. The Raman intensity of the AZO nanoparticles (Al = 5 at.%) increased when the annealing temperature was increased. Increasing the degree of crystalline not only reduced the residual stress, but also improved the physical properties of the nanoparticles
Availability note (English)
Available from http://dx.doi.org/10.1016/j.apsusc.2008.03.080Additional details
Identifiers
- DOI
- 10.1016/j.apsusc.2008.03.080;
- PII
- S0169-4332(08)00612-0;
Publishing Information
- Journal Title
- Applied Surface Science
- Journal Volume
- 254
- Journal Issue
- 18
- Journal Page Range
- p. 5791-5795
- ISSN
- 0169-4332
- CODEN
- ASUSEE
INIS
- Country of Publication
- Netherlands
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 40033576
- Subject category
- S36: MATERIALS SCIENCE;
- Descriptors DEI
- ALUMINIUM IONS; ANNEALING; CRYSTALLIZATION; DOPED MATERIALS; GRAIN SIZE; NANOSTRUCTURES; PARTICLES; PHOTOLUMINESCENCE; PHYSICAL PROPERTIES; RAMAN SPECTRA; RESIDUAL STRESSES; SCANNING ELECTRON MICROSCOPY; SOL-GEL PROCESS; TEMPERATURE RANGE 0400-1000 K; TEMPERATURE RANGE 1000-4000 K; X-RAY DIFFRACTION; ZINC OXIDES
- Descriptors DEC
- CHALCOGENIDES; CHARGED PARTICLES; COHERENT SCATTERING; DIFFRACTION; ELECTRON MICROSCOPY; EMISSION; HEAT TREATMENTS; IONS; LUMINESCENCE; MATERIALS; MICROSCOPY; MICROSTRUCTURE; OXIDES; OXYGEN COMPOUNDS; PHASE TRANSFORMATIONS; PHOTON EMISSION; SCATTERING; SIZE; SPECTRA; STRESSES; TEMPERATURE RANGE; ZINC COMPOUNDS
Optional Information
- Copyright
- Copyright (c) 2008 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.