Published May 1987
| Version v1
Journal article
Composition of CVD tungsten silicides
Creators
- 1. Electrical Engineering, Hosei Univ., Kajinocho, Koganei, Tokyo 184
Description
The composition of tungsten silicide (WSi/sub x/) deposited by chemical vapor deposition on silicon and silicon dioxide substrates was studied. The composition x changed from 2.7 to 2.2 with varying WF/sub 6/ flow rate from 6 to 20 cm/sup 3//min in the deposition on silicon. When annealing was performed at 10000C, the dissociation of excess silicon occurred from the nonstoichiometric silicide in the layer on the silicon. As a result, the composition of each layer, which was different when deposited, tended toward the same composition of around 2.1. This result indicated the formation of near-stoichiometric silicide as a result of annealing
Additional details
Publishing Information
- Journal Title
- J. Electrochem. Soc.
- Journal Volume
- 135
- Journal Issue
- 5
- Series
- J. Electrochem. Soc.
- Journal Page Range
- 1302-1306
- ISSN
- 0013-4651
- CODEN
- JESOA
INIS
- Country of Publication
- United States
- Country of Input or Organization
- United States
- INIS RN
- 18089094
- Subject category
- S36: MATERIALS SCIENCE; S36: MATERIALS SCIENCE;
- Descriptors DEI
- ANNEALING; CHEMICAL COMPOSITION; CHEMICAL VAPOR DEPOSITION; DISSOCIATION; ELECTRIC CONDUCTIVITY; FABRICATION; INTERFACES; LAYERS; PRECIPITATION; SILICON; SILICON OXIDES; STOICHIOMETRY; TUNGSTEN SILICIDES; VERY HIGH TEMPERATURE
- Descriptors DEC
- CHALCOGENIDES; CHEMICAL COATING; DEPOSITION; ELECTRICAL PROPERTIES; ELEMENTS; HEAT TREATMENTS; OXIDES; OXYGEN COMPOUNDS; PHYSICAL PROPERTIES; SEMIMETALS; SEPARATION PROCESSES; SILICIDES; SILICON COMPOUNDS; SURFACE COATING; TRANSITION ELEMENT COMPOUNDS; TUNGSTEN COMPOUNDS