Analysis of photoluminescence spectra of In P modified crystals

The comparison of experimental data with theory of radiation recombination of strongly dilute compensated semiconductors is carried out in the work. In particular the comparison of 1,35 eV radiation band's parameters temperature dependence with strongly dilute compensated semiconductors's luminescence theory for T T-radiation transitions case is given. It is known, that integral efficiency of 1,35 eV band has been exponentially reducing with temperature increasing, and half-width has been un monotonous changed. It linearly increasing within temperature range 77 K230 K - reducing. This factor is confirmed the availability of different radiation mechanisms. The conclusion that luminescence of In P modified crystals within field T<230 K is attributed to transitions through tails condition density (T T - transitions) was made in the work. The main channels within high temperature range T>230 K are inter-zonal transitions. Temperature dependences of main parameters of this radiation band within 77 K<T<220 K range functionally coincides with theory for T T - radiation transitions. It is allows to compare 1,35 eV band spectrum form with theoretically expecting one. It is shown that effective depth of tail condition density defined by its inclination under 77 K is constitutes 67 MeV and this is satisfactorily agree with calculations of root-mean-square fluctuation for potential in In P. 3 refs., 4 figs