Influence of the Ar-ion irradiation on the giant magnetoresistance in Fe/Cr multilayers
Creators
- 1. Institute of Electronic Materials Technology, 01-919 Warsaw (Poland)
- 2. Institute of Molecular Physics, Polish Academy of Sciences, 60-179 Poznan (Poland)
Description
The influence of 200 keV Ar-ion irradiation on the interlayer coupling in Fe/Cr multilayers exhibiting the giant magnetoresistance (GMR) effect is studied by the conversion electron Moessbauer spectroscopy (CEMS), vibrating sample magnetometer hysteresis loops, magnetoresistivity, and electric resistivity measurements and supplemented by the small-angle x-ray diffraction. The increase of Ar-ion dose causes an increase of interface roughness, as evidenced by the increase of the Fe step sites detected by CEMS. The modification of microstructure induces changes in magnetization reversal indicating a gradual loss of antiferromagnetic (AF) coupling correlated with the degradation of the GMR effect. Distinctly weaker degradation of AF coupling and the GMR effect observed for irradiated samples with a thicker Cr layer thickness suggest that observed effects are caused by pinholes creation. The measurements of temperature dependence of remanence magnetization confirm increase of pinhole density and sizes during implantation. Other effects which can influence spin dependent contribution to the resistance, such as interface roughness as well as shortening of mean-free path of conduction electrons, are also discussed
Additional details
Identifiers
- DOI
- 10.1063/1.1559640;
Publishing Information
- Journal Title
- Journal of Applied Physics
- Journal Volume
- 93
- Journal Issue
- 9
- Journal Page Range
- p. 5514-5518
- ISSN
- 0021-8979
- CODEN
- JAPIAU
INIS
- Country of Publication
- United States
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 35002015
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; S36: MATERIALS SCIENCE;
- Descriptors DEI
- ARGON IONS; CHROMIUM; HYSTERESIS; ION BEAMS; ION IMPLANTATION; IRON; MAGNETIZATION; MAGNETORESISTANCE; MOESSBAUER EFFECT; TEMPERATURE DEPENDENCE; THIN FILMS
- Descriptors DEC
- BEAMS; CHARGED PARTICLES; ELECTRIC CONDUCTIVITY; ELECTRICAL PROPERTIES; ELEMENTS; FILMS; IONS; METALS; PHYSICAL PROPERTIES; TRANSITION ELEMENTS
Optional Information
- Notes
- (c) 2003 American Institute of Physics.