Development of CMOS sensors with digital pixels for the ILD vertex detector
Description
This thesis presents the development of CMOS pixel sensors (CPS) integrated with pixel- level ADCs for the outer layers of the ILD (International Large Detector) vertex detector. Driven by physics in the ILC (International Linear Collider), an unprecedented precision is required for the detectors. The priority of the sensors mounted on the outer layers is low power consumption due to the large coverage ratio of the sensitive area (∼90%) in the vertex detector. The CPS integrated with ADCs is a promising candidate for this application. The architecture of column-level ADCs, exists but do not provide an optimized performance in terms of noise and power consumption. The concept of pixel-level ADCs has been proposed. Benefiting from the all-digital pixel outputs, pixel-level ADCs exhibit the obvious merits on noise, speed, insensitive area, and power consumption. In this thesis, a prototype sensor, called MIMADC, has been implemented by a 0.18 μm CIS (CMOS Image Sensor) process. The target of this sensor is to verify the feasibility of the CPS integrated with pixel-level ADCs. Three matrices are included in this prototype but with two different types of pixel-level ADCs: one with successive approximation register (SAR) ADCs, and the other two with single-slope (SS) ADCs. All of them feature a same pixel size of 35x35 μm2 and a resolution of 3-bit. In this thesis, the prototype is presented for both theoretical analyses and circuit designs. The test results of the prototype are also presented. (author)
Abstract (French)
La these presente le developpement de CPS (CMOS Pixel Sensors) integre avec CAN au niveau du pixel pour les couches externes du detecteur de vertex de l'ILD (International Large Detector). Motive par la physique dans l'ILC (International Linear Collider), une precision elevee est necessaire pour les detecteurs. La priorite des capteurs qui montre sur les couches externes est une faible consommation d'energie en raison du rapport de couverture de la surface sensible (∼90%) dans le detecteur de vertex. Le CPS integre avec CAN est un choix approprie pour cette application. L'architecture de CAN de niveau colonne ne fournit pas une performance optimisee en termes de bruit et consommation d'energie. La conception de CAN au niveau du pixel a ete proposee. Beneficiant des sorties de pixels tout-numerique, CAN au niveau des pixels presentent les merites evidents sur le bruit, la vitesse, la zone sensible et la consommation d'energie. Dans cette these, un prototype de capteur, appele MIMADC, a ete implemente par un processus de 0.18 μm CIS (CMOS Image Sensor). L'objectif de ce capteur est de verifier la faisabilite du CPS integre avec les CAN au niveau des pixels. Trois matrices sont incluses dans ce prototype, mais avec deux types differents de CAN au niveau de pixel: une avec des CAN a registre a approximations successives (SAR), et les deux autres avec des CAN a une seule pente (Single-Slope, SS) CAN. Toutes les trois possedant les pixels de la meme taille de 35×35 μm2 et une resolution de 3-bit. Dans ce texte, des analyses theoriques et le prototype sont presentes, ainsi que la conception detaille des circuits. (auteur)
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Additional details
Additional titles
- Original title (English)
- Developpement de capteurs a CMOS avec pixel numerique pour le ILD detecteur de vertex
Publishing Information
- Imprint Pagination
- 199 p.
- Report number
- FRNC-TH--13897
INIS
- Country of Publication
- France
- Country of Input or Organization
- France
- INIS RN
- 54022782
- Subject category
- S46: INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY;
- Resource subtype / Literary indicator
- Thesis
- Descriptors DEI
- ANALOG-TO-DIGITAL CONVERTERS; CHARGE COLLECTION; CMOS CIRCUITS; COMPARATOR CIRCUITS; ENERGY ABSORPTION; ENERGY CONSUMPTION; INTERNATIONAL LINEAR COLLIDER; LOGIC CIRCUITS; MULTIPLEXERS; PHYSICAL RADIATION EFFECTS; P-N JUNCTIONS; PREAMPLIFIERS; PULSE AMPLIFIERS; READOUT SYSTEMS; SEMICONDUCTOR STORAGE DEVICES; SENSORS; SI SEMICONDUCTOR DETECTORS; SIGNAL-TO-NOISE RATIO; SPECIFICATIONS
- Descriptors DEC
- ABSORPTION; ACCELERATORS; AMPLIFIERS; DIMENSIONLESS NUMBERS; ELECTRONIC CIRCUITS; ELECTRONIC EQUIPMENT; EQUIPMENT; INTEGRATED CIRCUITS; LINEAR ACCELERATORS; LINEAR COLLIDERS; MEASURING INSTRUMENTS; MEMORY DEVICES; MICROELECTRONIC CIRCUITS; RADIATION DETECTORS; RADIATION EFFECTS; SEMICONDUCTOR DETECTORS; SEMICONDUCTOR DEVICES; SEMICONDUCTOR JUNCTIONS; SORPTION
Optional Information
- Notes
- 104 refs.; Available from the INIS Liaison Officer for France, see the INIS website for current contact and E-mail addresses