Published 1981 | Version v1
Miscellaneous Metadata-only

Relativistic electron channeling. Theory and experiment

Creators

  • 1. Tomskij Politekhnicheskij Inst. (USSR). Inst. Yadernoj Fiziki, Ehlektroniki i Avtomatiki

Description

The quantum-mechanical theory of fast electron channeling in monocrystals is developed. The basic results of the theory are compared with the experimentally obtained orientation dependences. Angular distributions of electrons with the energies from 0.8 to 2.5 MeV behind 1 to 20 μm thick silicon monocrystals are obtained. Formation peculiarities of the obtained electronograms in the form of 6 or 12 contrast spots of intensity can be explained within the frames of the model of bond states and ''transition type''

Additional details

Additional titles

Original title (Russian)
Каналирование релятивисцких электронов. Теория и эксперимент

Publishing Information

Imprint Title
Proceedings of the 7. International conference on atomic collisions in solids. V. 1
Imprint Pagination
308 p.
Journal Page Range
p. 136-138.
Report number
INIS-SU--134

Conference

Title
7. International conference on atomic collisions in solids.
Dates
19 - 23 Sep 1977.
Place
Moscow (USSR).

INIS

Country of Publication
USSR
Country of Input or Organization
USSR
INIS RN
14715856
Subject category
S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
Resource subtype / Literary indicator
Conference
Descriptors DEI
ANGULAR DISTRIBUTION; BOUND STATE; ELECTRON CHANNELING; MEV RANGE 01-10; MONOCRYSTALS; POTENTIALS; RUTHERFORD SCATTERING; SILICON; THICKNESS; WAVE FUNCTIONS
Descriptors DEC
CHANNELING; CRYSTALS; DIMENSIONS; DISTRIBUTION; ELASTIC SCATTERING; ELEMENTS; ENERGY RANGE; FUNCTIONS; MEV RANGE; SCATTERING; SEMIMETALS

Optional Information

Notes
11 refs.; 2 figs. Imprint:Trudy 7. Mezhdunarodnoj konferentsii po atomnym stolknoveniyam v tverdykh telakh. Tom 1.