Formation of an anisotropic energy gap in the valence-fluctuating system of CeNiSn
Creators
- 1. Faculty of Integrated Arts and Sciences, Hiroshima University, Hiroshima 730, (Japan)
- 2. Faculty of Science, Hiroshima University, Hiroshima 730 (Japan)
- 3. Department de Physique de la Matiere Condensee, Universite de Geneve, 1211 Geneve 4 (Switzerland)
Description
Measurements of susceptibility χ, resistivity ρ, and thermoelectric power S have been performed on single-crystal CeNiSn. Only along the a axis of the orthorhombic structure do χ(T) and ρ(T) exhibit pronounced peaks at 12 K, whereas no anomaly was found in the specific heat. The gap energies estimated from ρ(T) are 2.4, 5.5, and 5.0 K along the a, b, and c axes, respectively. Near 3 K, Sa(T) and Sc(T) exhibit extremely sharp peaks, which indicate the presence of a density of states within the gap. The magnetic contribution to the specific heat divided by temperature, Cm/T versus T reveals a maximum of 0.19 J/K2 mol near 6.7 K. These results suggest that an antiferromagnetic correlation develops near 12 K, which induces the formation of the pseudogap in the narrow band of heavy quasiparticles
Additional details
Publishing Information
- Journal Title
- Physical Review, B: Condensed Matter
- Journal Volume
- 41
- Journal Issue
- 13
- Series
- Phys. Rev., B: Condens. Matter.
- Journal Page Range
- 9607-9610
- ISSN
- 0163-1829
- CODEN
- PRBMD
INIS
- Country of Publication
- United States
- Country of Input or Organization
- United States
- INIS RN
- 21066816
- Subject category
- S36: MATERIALS SCIENCE;
- Descriptors DEI
- ANISOTROPY; CERIUM COMPOUNDS; ELECTRIC CONDUCTIVITY; ENERGY GAP; MAGNETIC SUSCEPTIBILITY; MONOCRYSTALS; NICKEL COMPOUNDS; SPECIFIC HEAT; THERMOELECTRIC PROPERTIES; TIN COMPOUNDS
- Descriptors DEC
- CRYSTALS; ELECTRICAL PROPERTIES; MAGNETIC PROPERTIES; PHYSICAL PROPERTIES; RARE EARTH COMPOUNDS; THERMODYNAMIC PROPERTIES; TRANSITION ELEMENT COMPOUNDS