Published March 2008 | Version v1
Miscellaneous Open

Study on Crystallographic Properties of Li Doped ZnO Thin Films

Creators

Description

Li-doped ZnO film is prepared on highly polished Si substrate. The process temperature are range from 4000C to 6000C and maintained 1 hr for homogenization. According to the experimental results, it is significant that the growth chemistry is quite feasible and expected to be crystalline at above-mentioned temperatures.

Availability note (English)

Also Published in Journal of the Myanmar Academy of Arts and Science

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Additional details

Publishing Information

Imprint Place
Yangon (Myanmar)
Imprint Pagination
11 p.
Report number
INIS-MM--110

INIS

Country of Publication
Myanmar
Country of Input or Organization
Myanmar
INIS RN
41086851
Subject category
S36: MATERIALS SCIENCE;
Descriptors DEI
CRYSTALLOGRAPHY; DOPED MATERIALS; HOMOGENIZATION METHODS; LITHIUM; TEMPERATURE DEPENDENCE; TEMPERATURE RANGE 0400-1000 K; THIN FILMS; X-RAY DIFFRACTION; ZINC OXIDES
Descriptors DEC
ALKALI METALS; CALCULATION METHODS; CHALCOGENIDES; COHERENT SCATTERING; DIFFRACTION; ELEMENTS; FILMS; MATERIALS; METALS; OXIDES; OXYGEN COMPOUNDS; SCATTERING; TEMPERATURE RANGE; ZINC COMPOUNDS