Published February 2005
| Version v1
Journal article
Diagnostics of inhomogeneity in distribution of recombination centers in silicon phototransducers by photocurrents spectra
- 1. Moskovskij Gosudarstvennyj Univ. im. M.V. Lomonosova, Moscow (Russian Federation)
- 2. Nauchno-Proizvodstvennoe Ob''edinenie Kvant, Moscow (Russian Federation)
- 3. Inst. Yadernoj Fiziki im. D.V. Skobel'tsyna Moskovskogo Gosudarstvennogo Univ. im. M.V. Lomonosova, Moscow (Russian Federation)
Description
Spectral dependences of photocurrent of silicon phototransducers irradiated by average 1.6 MeV energy protons were measured within 1.1-1.6 eV photon energy range. One demonstrated possibility to determine a defective layer on the basis of the mentioned spectra, that was, to determine depth and average lifetime of minority carriers. By means of computer base simulation one istudied the relationship between defective layer parameters and layer depth determination accuracy
Abstract (Russian)
Спектральные зависимости фототока кремниевых фотопреобразователей, облученных протонами со средней энергией 1.6 МэВ, измерены в диапазоне энергий фотонов 1.1-1.6 эВ. Показана возможность определения по этим спектрам параметров дефектного слоя: толщины и среднего времени жизни неосновных носителей заряда. Путем компьютерного моделирования исследована зависимость между параметрами дефектного слоя и точностью определения его толщиныAdditional details
Additional titles
- Original title (Russian)
- Диагностика неоднородности распределения рекомбинационных центров в кремниевых фотопреобразователях по спектрам фототока
Publishing Information
- Journal Title
- Izvestiya Akademii Nauk. Rossijskaya Akademiya Nauk. Seriya Fizicheskaya
- Journal Volume
- 69
- Journal Issue
- 2
- Journal Page Range
- p. 282-286
- ISSN
- 1026-3489
- CODEN
- IRAFEO
Conference
- Title
- X-ray optics-2004 workshop
- Original Conference Title
- Soveshchanie Rentgenovskaya optika-2004
- Dates
- May 2004
- Place
- Nizhnij Novgorod (Russian Federation)
INIS
- Country of Publication
- Russian Federation
- Country of Input or Organization
- Russian Federation
- INIS RN
- 38042875
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Resource subtype / Literary indicator
- Conference, Numerical Data
- Descriptors DEI
- CARRIER LIFETIME; COMPUTERIZED SIMULATION; CRYSTAL DEFECTS; DIAGRAMS; ERRORS; MEV RANGE 01-10; NUMERICAL DATA; PHOTOCURRENTS; PROTON BEAMS; RADIATION DOSES; RECOMBINATION; SILICON SOLAR CELLS; THICKNESS
- Descriptors DEC
- BEAMS; CRYSTAL STRUCTURE; CURRENTS; DATA; DIMENSIONS; DIRECT ENERGY CONVERTERS; DOSES; ELECTRIC CURRENTS; ENERGY RANGE; EQUIPMENT; INFORMATION; LIFETIME; MEV RANGE; NUCLEON BEAMS; PARTICLE BEAMS; PHOTOELECTRIC CELLS; PHOTOVOLTAIC CELLS; SIMULATION; SOLAR CELLS; SOLAR EQUIPMENT
Optional Information
- Notes
- 14 refs., 3 figs., 1 tab.