Reflectance spectra of crystals of the ZnTe-CsTe system
- 1. AN Moldavskoj SSR, Kishinev. Inst. Prikladnoj Fiziki
Description
The reflection spectra of undoped ZnTe and CdTe crystals as well as ZnTe crystals doped with Cs and Ga2O3 and Znsub(x)Cdsub(1-x)Te solid solutions with x=0.2, 0.4, 0.5, 0.6, 0.7, 0.8 are investigated. The solid solution crystals and the ZnTe:Cs crystals were prepared with the isothermal method. All samples have p-type conduction. The hole concentration determined from Hall-effect measurements at 300 K ranged from 2.1016 m-3 for CdTe to 1019 m-3 for ZnTe and 2.1020 m-3 for ZnTe:Cs. The Ga2O3 doped ZnTe crystals were grown from a molten solution. The reflection spectra were measured by the standard methods at selected wavelengths at 300 K and 90 K in the range of 1-5.5 eV. The accuracy is 0.2-0.3%. Typical spectra are shown. The positions of reflection peaks in the ZnTe-CdTe system are given. In the spectra of all samples exciton peaks E0, and peaks E2 and E1+Δ1 are found, as well as the triplet peak A (A1, A2, A3) and the peaks E1, E1+Δ1, B1, B2, B3. Samples of a certain composition of the ZnTe-CdTe system exhibit a strong influence of the ''aging'' of freshly cleaved samples on the spectra: the reflection in the vacuum ultraviolet range fell gradually with time and the details of the complex structure became blurred. The obtained results are compared with data from other papers
Additional details
Additional titles
- Original title (Russian)
- Спектры отражения кристаллов системы ZnTe-CdTe
Publishing Information
- Journal Title
- Fiz. Tekh. Poluprovodn.
- Journal Volume
- 9
- Journal Issue
- 9
- Series
- Fiz. Tekh. Poluprovodn.
- Journal Page Range
- 1809-1812
INIS
- Country of Publication
- USSR
- Country of Input or Organization
- USSR
- INIS RN
- 9365238
- Subject category
- S36: MATERIALS SCIENCE; S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Descriptors DEI
- BAND THEORY; CADMIUM TELLURIDES; CESIUM ADDITIONS; CRYSTAL DOPING; CRYSTALS; DIAGRAMS; DOPED MATERIALS; EV RANGE 01-10; EV RANGE 10-100; GALLIUM OXIDES; HALL EFFECT; HIGH TEMPERATURE; MEDIUM TEMPERATURE; P-TYPE CONDUCTORS; REFLECTION; SOLID SOLUTIONS; ZINC COMPOUNDS
- Descriptors DEC
- CADMIUM COMPOUNDS; CHALCOGENIDES; DISPERSIONS; ENERGY RANGE; EV RANGE; GALLIUM COMPOUNDS; HOMOGENEOUS MIXTURES; MIXTURES; OXIDES; OXYGEN COMPOUNDS; SEMICONDUCTOR MATERIALS; SOLUTIONS; TELLURIDES; TELLURIUM COMPOUNDS
Optional Information
- Notes
- For English translation see the journal Sov. Phys. Semicond.