Published 2015
| Version v1
Miscellaneous
Record single-mode power of 1300 nm-wavelength VCSELs
Creators
- 1. Laboratoire de Physique des Nanostructures, Ecole Polytechnique Federale de Lausanne, Lausanne (Switzerland)
Description
Record-high fundamental mode output power of 6.8 mW at 20 degrees Celsius achieved with wafer-fused VCSELs emitting at 1300 nm is reported in this paper. VCSEL contains an InAlGaAs-InP active with buried tunnel junction and undoped AlGaAs/GaAs Distributed Bragg Reflectors. This performance positions wafer-fused VCSELs as prime candidates for many applications in low power consumption, 'green' photonics. (authors)
Additional details
Publishing Information
- Publisher
- Technical University of Moldova
- Imprint Place
- Chisinau (Moldova, Republic of)
- ISBN
- 978-9975-45-377-6
- Imprint Title
- ICTEI-2015: International Conference on Telecommunications, Electronics and Informatics. Proceedings
- Imprint Pagination
- 516 p.
- Journal Page Range
- p. 166-168
- Report number
- INIS-MD--021
Conference
- Title
- International Conference on Telecommunications, Electronics and Informatics
- Acronym
- ICTEI-2015
- Dates
- 20-23 May 2015
- Place
- Chisinau (Moldova, Republic of)
INIS
- Country of Publication
- Moldova, Republic of
- Country of Input or Organization
- Moldova, Republic of
- INIS RN
- 46055145
- Subject category
- S36: MATERIALS SCIENCE;
- Resource subtype / Literary indicator
- Conference, Non-conventional Literature
- Descriptors DEI
- ALUMINIUM COMPOUNDS; ARSENIC COMPOUNDS; BRAGG REFLECTION; EMISSION; EQUIPMENT; GALLIUM COMPOUNDS; INDIUM COMPOUNDS; LASERS; OPTICAL PROPERTIES; PHOSPHORUS COMPOUNDS; PHOTOLUMINESCENCE; REFLECTIVITY
- Descriptors DEC
- EMISSION; LUMINESCENCE; OPTICAL PROPERTIES; PHOTON EMISSION; PHYSICAL PROPERTIES; REFLECTION; SURFACE PROPERTIES
Optional Information
- Notes
- 6 refs., 6 figs.