Charge deposition distributions in targets irradiated by electrons

Charge deposition in targets consisting of materials with atomic numbers from 6 to 92 irradiated by normally impinging broad electron beams with energies from 0.1 to 10 MeV arc studied. Using the modification of trajectory rotation method for the charge deposition calculations, the data on primary electron charge deposition distributions in target are obtained. An analysis of the mechanism of charge deposition distribution shaping in small-size spatial regions in a target is made. The role of stochastic wandering of electrons near the points where they deposit their charge is discussed for charge deposition near inhomogeneities in a target. In is noted that neglect of the electron stochastic wandering can lead to the artifacts in calculations and erroneous conclusions concerning charge deposition near interfaces in heterogeneous targets