Published January 21, 2008 | Version v1
Journal article Metadata-only

Synthesis and interfacial phenomena in ultra-thin yttria-doped zirconia films grown by alloy oxidation under photon irradiation

Creators

  • 1. Harvard School of Engineering and Applied Sciences, Harvard University, Cambridge, Massachusetts 02138 (United States)

Description

We report on synthesis, structural evolution, and high temperature properties of ultrathin yttria-doped-zirconia (YDZ) films grown by alloy oxidation under ultraviolet (UV) irradiation. From high-resolution studies on interfacial layer growth kinetics, we found that oxygen diffusivity maximum in UV-YDZ film is located at higher yttria concentration than that in thermally oxidized films. It is likely that the oxygen-rich nature of UV-grown films enabled by photon irradiation is responsible for the observed differences. The results demonstrate routes for synthesis of oxide films with controlled structure and stoichiometry

Additional details

Identifiers

DOI
10.1063/1.2837194;

Publishing Information

Journal Title
Applied Physics Letters
Journal Volume
92
Journal Issue
3
Journal Page Range
p. 033107-033107.3
ISSN
0003-6951
CODEN
APPLAB

INIS

Country of Publication
United States
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
39038505
Subject category
S36: MATERIALS SCIENCE;
Descriptors DEI
CRYSTAL GROWTH; DOPED MATERIALS; IRRADIATION; OXIDATION; OXYGEN; PHOTONS; PHYSICAL RADIATION EFFECTS; STOICHIOMETRY; THIN FILMS; ULTRAVIOLET RADIATION; YTTRIUM OXIDES; ZIRCONIUM OXIDES
Descriptors DEC
BOSONS; CHALCOGENIDES; CHEMICAL REACTIONS; ELECTROMAGNETIC RADIATION; ELEMENTARY PARTICLES; ELEMENTS; FILMS; MASSLESS PARTICLES; MATERIALS; NONMETALS; OXIDES; OXYGEN COMPOUNDS; RADIATION EFFECTS; RADIATIONS; TRANSITION ELEMENT COMPOUNDS; YTTRIUM COMPOUNDS; ZIRCONIUM COMPOUNDS

Optional Information

Notes
(c) 2008 American Institute of Physics