Published December 4, 1986 | Version v1
Journal article Metadata-only

Improvement in AlGaAs/GaAs HBT power gains with buried proton-implanted layer

Creators

  • 1. NTT Elecrtrical Communication Labs., Kanagawa (Japan)

Description

A new structure for AlGaAs/GaAs heterojunction bipolar transistors (HBTs) that employs a buried proton-implanted external collector layer is proposed. This structure has been successfully used to achieve high-performance HBTs with maximum oscillation frequencies fsub(max) up to 51 GHz for a device with 2 μm x 5 μm emitter and 4 μm x 7 μm collector dimensions. (author)

Additional details

Publishing Information

Journal Title
Electron. Lett.
Journal Volume
22
Journal Issue
25
Series
Electron. Lett.
Journal Page Range
1317-1318
ISSN
0013-5194
CODEN
ELLEA

INIS

Country of Publication
United Kingdom
Country of Input or Organization
United Kingdom
INIS RN
18043417
Subject category
S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
Descriptors DEI
ALUMINIUM ARSENIDES; CAPACITANCE; DIGITAL CIRCUITS; ELECTRIC CONDUCTIVITY; GAIN; GALLIUM ARSENIDES; ION IMPLANTATION; LAYERS; OSCILLATIONS; PROTON BEAMS; SEMICONDUCTOR MATERIALS; TRANSISTORS
Descriptors DEC
ALUMINIUM COMPOUNDS; AMPLIFICATION; ARSENIC COMPOUNDS; ARSENIDES; BEAMS; ELECTRICAL PROPERTIES; ELECTRONIC CIRCUITS; GALLIUM COMPOUNDS; MATERIALS; NUCLEON BEAMS; PARTICLE BEAMS; PHYSICAL PROPERTIES; SEMICONDUCTOR DEVICES