Published March 2010
| Version v1
Journal article
Peculiarities of piezoresistance of γ-irradiated n-Si crystals in the case of symmetric position of the deformation axis relative to all isoenergetic ellipsoids
Creators
- 1. Luts'k National Technical University, Luts'k (Ukraine)
- 2. Volun National University, Luts'k (Ukraine)
Description
The piezoresistance of γ-irradiated n-Si crystals is studied. It is shown that, for this crystallographic direction, the basic coefficient of a change of the energy gap is insignificant, since the shifts of the deepest level EC - 0.17 eV and the conduction band valleys in n-Si under deformation are practically identical.
Additional details
Additional titles
- Original title (Ukrainian)
- Osoblivostyi p'jezooporu γ-opromyinenikh kristalyiv n-Si u vipadku simetrichnogo rozmyishchennya osyi deformatsyiyi vyidnosno vsyikh yizoenergetichnikh elyipsoyidyiv
Publishing Information
- Journal Title
- Ukrayins'kij Fyizichnij Zhurnal (Kyiv)
- Journal Volume
- 55
- Journal Issue
- no.3
- Journal Page Range
- p. 323-326
- ISSN
- 0372-400X
INIS
- Country of Publication
- Ukraine
- Country of Input or Organization
- Ukraine
- INIS RN
- 41071771
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Descriptors DEI
- BRILLOUIN ZONES; GAMMA RADIATION; N-TYPE CONDUCTORS; SEMICONDUCTOR JUNCTIONS; SILICON
- Descriptors DEC
- ELECTROMAGNETIC RADIATION; ELEMENTS; IONIZING RADIATIONS; MATERIALS; RADIATIONS; SEMICONDUCTOR MATERIALS; SEMIMETALS; ZONES