Published 2004 | Version v1
Miscellaneous Metadata-only

Homogeneity check of ion implantation in silicon by wide-angle ellipsometry

Creators

  • 1. Research Institute for Technical Physics and Materials Science, Budapest, (Hungary)

Description

no abstract available

Part of:
Abstracts of 5. International Symposium Ion Implantation and Other Applications of Ions and Electrons, ION 2004

Additional details

Publishing Information

Imprint Title
Abstracts of 5. International Symposium Ion Implantation and Other Applications of Ions and Electrons, ION 2004
Imprint Pagination
257 p.
Journal Page Range
p. 91

Conference

Title
5. International Symposium Ion Implantation and Other Applications of Ions and Electrons, ION 2004
Dates
14-17 Jun 2004
Place
Kazimierz Dolny (Poland)

INIS

Country of Publication
Poland
Country of Input or Organization
Poland
INIS RN
36060083
Subject category
S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; S36: MATERIALS SCIENCE;
Resource subtype / Literary indicator
No Abstract, Conference, Non-conventional Literature
Descriptors DEI
CRYSTAL DEFECTS; DEPTH; ELLIPSOMETRY; HOMOGENEOUS MIXTURES; ION IMPLANTATION; MONOCRYSTALS; PHYSICAL RADIATION EFFECTS; RADIATION DOSES; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SILICON; SPATIAL DISTRIBUTION; XENON IONS
Descriptors DEC
CHARGED PARTICLES; CRYSTAL STRUCTURE; CRYSTALS; DIMENSIONS; DISPERSIONS; DISTRIBUTION; DOSES; ELEMENTS; IONS; MEASURING METHODS; MIXTURES; RADIATION EFFECTS; SEMIMETALS; SPECTROSCOPY

Optional Information

Notes
3 refs