Published October 15, 2015 | Version v1
Journal article

Charge localization effects and transport in dendritic nanostructures for photovoltaic applications

  • 1. Horia Hulubei National Institute for Physics and Nuclear Engineering, 077126 Magurele, Ilfov (Romania)
  • 2. University of Bucharest, Faculty of Physics, Materials and Devices for Electronics and Optoelectronics Research Center, 077125 Magurele, Ilfov (Romania)

Description

Highlights: • Charge localization and transport are investigated in dendritic interfaces (DIs). • Several types of DIs are modeled by diffusion limited aggregation type processes. • A coherent scattering formalism is employed to investigate the charge localization effects and transfer characteristics. • The results indicate correlations between the surface area of the DIs and transmission functions. • The approach provides a general framework for the characterization and optimization of DIs as part of open quantum systems. - Abstract: Charge localization effects and transport properties in dendritic interfaces are investigated in the framework of a coherent scattering formalism. Due to the large surface area, tree shaped interfaces enhance the overall efficiency of bulk heterojunction photovoltaic applications. The charge localization effects are analyzed for different tree shapes, band offset potentials and in the context of varying the thickness of the tree branches. Two types of localization are pointed out – on the tree branches or inbetween. The transfer characteristics are influenced by the band offsets and the energy of the charged particles. A detailed statistical analysis shows the correlation between the average transmission function and the surface area of the dendritic interface. The current study provides a framework for the characterization and optimization of dendritic interfaces.

Availability note (English)

Available from http://dx.doi.org/10.1016/j.apsusc.2015.02.124

Additional details

Identifiers

DOI
10.1016/j.apsusc.2015.02.124;
PII
S0169-4332(15)00440-7;

Publishing Information

Journal Title
Applied Surface Science
Journal Volume
352
Journal Page Range
p. 158-162
ISSN
0169-4332
CODEN
ASUSEE

Conference

Title
10. international conference on physics of advanced materials
Acronym
ICPAM-10
Dates
22-28 Sep 2014
Place
Iasi (Romania)

INIS

Country of Publication
Netherlands
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
48017447
Subject category
S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
Resource subtype / Literary indicator
Conference
Descriptors DEI
AGGLOMERATION; CHARGE TRANSPORT; CHARGED PARTICLES; COHERENT SCATTERING; CORRELATIONS; DENDRITES; DIFFUSION; HETEROJUNCTIONS; INTERFACES; NANOSTRUCTURES; PHOTOVOLTAIC EFFECT; QUANTUM SYSTEMS; SURFACE AREA; SURFACES
Descriptors DEC
CRYSTALS; PHOTOELECTRIC EFFECT; SCATTERING; SEMICONDUCTOR JUNCTIONS; SURFACE PROPERTIES

Optional Information

Copyright
Copyright (c) 2015 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.