Published March 1995 | Version v1
Journal article Metadata-only

Effect of UV irradiation on the semiconductor-metal phase transition in VO2 films with different subsurface-layer structure

Creators

  • 1. Shubnikov Institute of Crystallography, Moscow (Russian Federation)

Description

The effect of UV irradiation on the semiconductor-metal phase transition was studied in single-crystal vanadium dioxide films. Under UV light the phase-transition temperature in VO2 increased by 2 K. The UV radiation induced the formation of clusters of the tetragonal VO2 phase that persisted at temperatures below the critical one. 5 refs., 2 figs

Additional details

Publishing Information

Journal Title
Crystallography Reports
Journal Volume
40
Journal Issue
2
Journal Page Range
p. 321-323.
ISSN
1063-7745
CODEN
CYSTE3

INIS

Country of Publication
United States
Country of Input or Organization
United States
INIS RN
27061643
Subject category
S36: MATERIALS SCIENCE; S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
Resource subtype / Literary indicator
Translation
Descriptors DEI
ELECTRON DIFFRACTION; IRRADIATION; METALS; PHASE TRANSFORMATIONS; PHYSICAL RADIATION EFFECTS; SEMICONDUCTOR MATERIALS; VANADIUM OXIDES
Descriptors DEC
CHALCOGENIDES; COHERENT SCATTERING; DIFFRACTION; ELEMENTS; MATERIALS; OXIDES; OXYGEN COMPOUNDS; RADIATION EFFECTS; SCATTERING; TRANSITION ELEMENT COMPOUNDS; VANADIUM COMPOUNDS

Optional Information

Notes
Translated from Kristallografiya; 40: No. 2, 355-357(1995). Cover-to-cover-translation of Kristallografiya.