Observation of chemical separation of In3Sb1Te2 thin film during phase transition
- 1. Beamline Division, Pohang Accelerator Laboratory, POSTECH, Pohang 790-784 (Korea, Republic of)
- 2. Department of Physics and Energy Harvest-Storage Research Center (EHSRC), University of Ulsan, Ulsan 680-749 (Korea, Republic of)
- 3. Brain Korea 21 Project (BK21) and Department of Materials Engineering, Chungnam University, Daejeon 305-764 (Korea, Republic of)
- 4. Energy Materials and Surface Sciences Unit, Okinawa Institute of Science and Technology Graduate University, Okinawa 904-0495 (Japan)
Description
We investigated the chemical states of In3Sb1Te2 (IST) thin film using high-resolution X-ray photoelectron spectroscopy (HRXPS) with the synchrotron radiation during in-situ annealing in ultra-high vacuum. To obtain the oxygen-free amorphous IST (a-IST), we performed the mild Ne+ ion sputtering. And also we confirmed the relative a-IST stoichiometry to be 54%:17%:29% based on HRXPS data. At the first and second phase transition temperatures of 350 and 400 °C, we observed the dramatic changes of chemical states from a-IST to InSb and the mixture of crystalline-IST and InTe, respectively. There was a depletion of Sb atoms on the surface after annealing at 750 °C. We assume that Sb atom is a key for the phase transition in IST. However, chemical state of the Sb in IST is unstable during the phase transition and it will be caused with the non-reversible process by this structural instability.
Availability note (English)
Available from http://dx.doi.org/10.1016/j.apsusc.2013.12.096Additional details
Identifiers
- DOI
- 10.1016/j.apsusc.2013.12.096;
- PII
- S0169-4332(13)02385-4;
Publishing Information
- Journal Title
- Applied Surface Science
- Journal Volume
- 292
- Journal Page Range
- p. 986-989
- ISSN
- 0169-4332
- CODEN
- ASUSEE
INIS
- Country of Publication
- Netherlands
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 46005247
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Descriptors DEI
- AMORPHOUS STATE; ANNEALING; ANTIMONY ALLOYS; CHEMICAL STATE; INDIUM ALLOYS; INDIUM ANTIMONIDES; INDIUM TELLURIDES; INSTABILITY; PHASE TRANSFORMATIONS; RESOLUTION; SEGREGATION; STOICHIOMETRY; SURFACES; SYNCHROTRON RADIATION; TELLURIUM ALLOYS; TEMPERATURE RANGE 0400-1000 K; THIN FILMS; TRANSITION TEMPERATURE; X-RAY PHOTOELECTRON SPECTROSCOPY
- Descriptors DEC
- ALLOYS; ANTIMONIDES; ANTIMONY COMPOUNDS; BREMSSTRAHLUNG; CHALCOGENIDES; ELECTROMAGNETIC RADIATION; ELECTRON SPECTROSCOPY; FILMS; HEAT TREATMENTS; INDIUM COMPOUNDS; PHOTOELECTRON SPECTROSCOPY; PHYSICAL PROPERTIES; PNICTIDES; RADIATIONS; SPECTROSCOPY; TELLURIDES; TELLURIUM COMPOUNDS; TEMPERATURE RANGE; THERMODYNAMIC PROPERTIES
Optional Information
- Copyright
- Copyright (c) 2013 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.