Computer simulation study on incident fluence dependence of ion reflection and sputtering processes from layered and mixed materials
Creators
- 1. Tokushima Univ., Faculty of Engineering, Tokushima (Japan)
Description
The fluence dependence of D ion reflection and sputtering from C-layered W material, W-layered C material and WxC1-x mixed material, has been demonstrated using the dynamic Monte Carlo program, EDDY. The fluence-dependent depth profile distributions explain such fluence dependence. For the layered materials, the fluence variations of reflection and sputtering are dependent on layer thickness. In particular, for the C layer thickness parallel to the mean ion range for the impact to pure C, the sputtering of the C layer is enhanced with increasing fluence by C emission due to the reflective scattering collisions of D with W near the surface. This is essentially due to the large target mass difference between W and C, which also brings about the fluence variations for the mixed material. The C sputtering is suppressed due to the dynamic behavior of C in the mixed material, whereas the reflection and W sputtering are enhanced. (author)
Additional details
Publishing Information
- Journal Title
- Japanese Journal of Applied Physics. Part 1, Regular Papers, Short Notes and Review Papers
- Journal Volume
- 40
- Journal Issue
- 11
- Journal Page Range
- p. 6581-6588
- ISSN
- 0021-4922
INIS
- Country of Publication
- Japan
- Country of Input or Organization
- Japan
- INIS RN
- 33011925
- Subject category
- S70: PLASMA PHYSICS AND FUSION TECHNOLOGY;
- Descriptors DEI
- CARBON; CATHODE SPUTTERING; COMPUTERIZED SIMULATION; DEUTERIUM IONS; ELASTIC SCATTERING; ION BEAMS; T CODES; TUNGSTEN
- Descriptors DEC
- BEAMS; CHARGED PARTICLES; COMPUTER CODES; ELEMENTS; IONS; METALS; NONMETALS; REFRACTORY METALS; SCATTERING; SIMULATION; SPUTTERING; TRANSITION ELEMENTS
Optional Information
- Notes
- 41 refs., 6 figs.