First wall of thermonuclear device

The first wall of a thermonuclear device is constituted with inner wall tiles, e.g. made of graphite and metal substrates for fixing them. However, since the heat expansion coefficient is different between the metal substrates and intermediate metal members, thermal stresses are caused to deteriorate the endurance of the inner wall tiles. In view of the above, low melting metals are disposed at the portion of contact between the inner wall tiles and the metal substrates and, further, a heat pipe structure is incorporated into the metal substrates. Under the thermal load, for example, during operation of the thermonuclear device, the low melting metals at the portion of contact are melted into liquid metals to enhance the state of contact between the inner wall tiles and the metal substrate to reduce the heat resistance and improve the heat conductivity. Even if there is a difference in the heat expansion coefficient between the inner wall tiles and the metal substrates, neither sharing stresses not thermal stresses are caused. Further, since the heat pipe structure is incorporated into the metal substrates, the lateral unevenness of the temperature in the metal substrates can be eliminated. Thus, the durability of the inner wall tiles can be improved. (N.H.)