Published August 11, 2000 | Version v1
Journal article

A comparison of the performance of irradiated p-in-n and n-in-n silicon microstrip detectors read out with fast binary electronics

Description

Both n-strip on n-bulk and p-strip on n-bulk silicon microstrip detectors have been irradiated at the CERN PS to a fluence of 3x1014 p cm-2 and their post-irradiation performance compared using fast binary readout electronics. Results are presented for test beam measurements of the efficiency and resolution as a function of bias voltage made at the CERN SPS, and for noise measurements giving detector strip quality. The detectors come from four different manufacturers and were made as prototypes for the SemiConductor Tracker of the ATLAS experiment at the CERN LHC

Additional details

Identifiers

PII
S016890020000259X;

Publishing Information

Journal Title
Nuclear Instruments and Methods in Physics Research. Section A, Accelerators, Spectrometers, Detectors and Associated Equipment
Journal Volume
450
Journal Issue
2-3
Journal Page Range
p. 297-306
ISSN
0168-9002
CODEN
NIMAER

Optional Information

Copyright
Copyright (c) 2000 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.