Published November 21, 1998
| Version v1
Journal article
Delta-ray production in silicon tracking systems for 2-50 GeV electrons
Creators
- 1. Physics Department, National Central University Chungli, Taiwan (China)
- 2. Physics Department, University of Geneva, CH-1211 Geneva (Switzerland)
Description
The production of δ-ray electrons in silicon strip tracking systems is measured for electrons in the energy range of 2-50 GeV. The results are compared to GEANT calculations. The production cutoff threshold is calibrated, and a value of Tcut=3D500 keV is chosen. The δ-ray angular distribution is measured for electrons transmitting through a 320 μm silicon wafer. The δ-ray production rate is approximately 1.3% within an angular region of 1-50 mrad. (Copyright (c) 1998 Elsevier Science B.V., Amsterdam. All rights reserved.)
Additional details
Publishing Information
- Journal Title
- Nuclear Instruments and Methods in Physics Research. Section A, Accelerators, Spectrometers, Detectors and Associated Equipment
- Journal Volume
- 418
- Journal Issue
- 1
- Journal Page Range
- p. 145-153
- ISSN
- 0168-9002
- CODEN
- NIMAER
INIS
- Country of Publication
- Netherlands
- Country of Input or Organization
- Belarus
- INIS RN
- 31064307
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Descriptors DEI
- ANGULAR DISTRIBUTION; ELECTRON BEAMS; GEV RANGE 01-10; GEV RANGE 10-100; PHYSICAL RADIATION EFFECTS; RADIATION DETECTORS; SI SEMICONDUCTOR DETECTORS
- Descriptors DEC
- BEAMS; DISTRIBUTION; ENERGY RANGE; GEV RANGE; LEPTON BEAMS; MEASURING INSTRUMENTS; PARTICLE BEAMS; RADIATION DETECTORS; RADIATION EFFECTS; SEMICONDUCTOR DETECTORS