Study of fundamental features of bias effect in metals under irradiation
Creators
Description
Studies on bias mechanisms, such as the dislocation bias and production bias have so far been made in the Fe and Ni model crystals. In the present work the interaction between an edge dislocation and interstitial clusters has been mainly studied by computer simulation from the viewpoint of the production bias for Fe and Ni. Capture zones for interstitial clusters In (bundles of n crowdions, n=1, 2, 3, 5) to an edge dislocation line have been obtained, with the definition of the capture zone as the region where the binding energy is larger than kT=0.067 eV (T=500 deg. C). This shows increasing capture areas on the expansion side of the edge dislocation line with increasing size of interstitial clusters both in Fe and Ni. The energy change from the as-trapped state of the interstitial cluster to the absorbed state into the edge dislocation core was also calculated. This showed that the final stable configuration is a jogged state in Fe. This is also correct in Ni but only when the size of the interstitial cluster is larger than a certain value. These results give a confirmed basis to the production bias mechanism
Additional details
Identifiers
- PII
- S0022311502011030;
Publishing Information
- Journal Title
- Journal of Nuclear Materials
- Journal Volume
- 307-311
- Journal Issue
- 1-4
- Series
- Countr of input: International Atomic Energy Agency (IAEA)
- Journal Page Range
- p. 982-987
- ISSN
- 0022-3115
- CODEN
- JNUMAM
INIS
- Country of Publication
- Netherlands
- Country of Input or Organization
- Netherlands
- INIS RN
- 34015714
- Subject category
- S36: MATERIALS SCIENCE;
- Descriptors DEI
- ATOMIC CLUSTERS; BINDING ENERGY; COMPUTERIZED SIMULATION; CROWDIONS; EDGE DISLOCATIONS; INTERSTITIALS; IRON; IRRADIATION; NICKEL; TEMPERATURE RANGE 0400-1000 K
- Descriptors DEC
- CRYSTAL DEFECTS; CRYSTAL STRUCTURE; DISLOCATIONS; ELEMENTS; ENERGY; LINE DEFECTS; METALS; POINT DEFECTS; SIMULATION; TEMPERATURE RANGE; TRANSITION ELEMENTS
Optional Information
- Copyright
- Copyright (c) 2002 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.