Published October 25, 1984 | Version v1
Journal article Metadata-only

Planar InGaAs/InP PINFET fabricated by Be ion implantation

Creators

  • 1. Atsugi Electrical Communication Lab., Kanagawa (Japan)

Description

Planar InGaAs PINFETs which provide the same heterostructure for both the PIN and the FET are proposed with the characteristics. p-type regions for PIN and FET are formed by Be ion implantation. Static optical response exhibits the total effective quantum efficiency of 400% at the wavelength of 1.55 μmm. (author)

Additional details

Publishing Information

Journal Title
Electron. Lett.
Journal Volume
20
Journal Issue
22
Series
Electron. Lett.
Journal Page Range
947-948
ISSN
0013-5194

INIS

Country of Publication
United Kingdom
Country of Input or Organization
United Kingdom
INIS RN
16032240
Subject category
S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
Descriptors DEI
BERYLLIUM IONS; ELECTRO-OPTICAL EFFECTS; FIELD EFFECT TRANSISTORS; GALLIUM ARSENIDES; INDIUM ARSENIDES; INDIUM PHOSPHIDES; ION IMPLANTATION; QUANTUM EFFICIENCY
Descriptors DEC
ARSENIC COMPOUNDS; ARSENIDES; ATOMIC IONS; CHARGED PARTICLES; EFFICIENCY; GALLIUM COMPOUNDS; INDIUM COMPOUNDS; IONS; PHOSPHIDES; PHOSPHORUS COMPOUNDS; SEMICONDUCTOR DEVICES; TRANSISTORS