Spin current generation by thermal gradient in graphene/h-BN/graphene lateral heterojunctions
Creators
- 1. Key Laboratory of Materials Physics, Institute of Solid State Physics, Chinese Academy of Sciences, Hefei 230031 (China)
- 2. School of Electronic Science and Applied Physics, Hefei University of Technology, Hefei 230009 (China)
- 3. School of Physics and Electronic Engineering, Jiangsu Normal University, Xuzhou 221116 (China)
- 4. State Key Laboratory of Quantum Optics and Quantum Optics Devices, Institute of Laser Spectroscopy, Shanxi University, Taiyuan 030006 (China)
Description
Electron transport driven by a temperature gradient in a transport junction constructed by connecting a zigzag hexagonal boron nitride (h-BN) nanoribbon between two graphene nanoribbons (Gr/BN/Gr) is studied by density functional calculations and non-equilibrium Green's function method. When the zigzag-edged graphene nanoribbons are in the ferromagnetic configuration, the BN barrier introduces a spin-dependent scattering and causes an 'X'-type spin-dependent transmission functions around the Fermi level at equilibrium. In a linear response approximation, this gives rise to a Seebeck thermopower with opposite signs for different spins. It drives electrons with different spins to flow in opposite directions under a finite temperature gradient. Calculations show that the charge current is zero while spin current is not, thus pure spin current is generated. These findings suggests the great importance of BN barrier in the generation of thermal spin current using graphene and the idea should be taken into consideration in the design of spintronic devices using two dimensional materials. (paper)
Availability note (English)
Available from http://dx.doi.org/10.1088/1361-6463/aae67bAdditional details
Identifiers
Publishing Information
- Journal Title
- Journal of Physics. D, Applied Physics
- Journal Volume
- 52
- Journal Issue
- 1
- Journal Page Range
- [7 p.]
- ISSN
- 0022-3727
- CODEN
- JPAPBE
INIS
- Country of Publication
- United Kingdom
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 52054445
- Subject category
- S77: NANOSCIENCE AND NANOTECHNOLOGY;
- Descriptors DEI
- BORON NITRIDES; DENSITY FUNCTIONAL METHOD; DIFFUSION BARRIERS; FASTENING; FERMI LEVEL; GRAPHENE; HETEROJUNCTIONS; NANOSTRUCTURES; SCATTERING; SPIN; TEMPERATURE GRADIENTS; TWO-DIMENSIONAL SYSTEMS
- Descriptors DEC
- ANGULAR MOMENTUM; BORON COMPOUNDS; CALCULATION METHODS; CARBON; CRYSTAL LATTICES; CRYSTAL STRUCTURE; ELEMENTS; ENERGY LEVELS; FABRICATION; JOINING; NITRIDES; NITROGEN COMPOUNDS; NONMETALS; PARTICLE PROPERTIES; PNICTIDES; SEMICONDUCTOR JUNCTIONS; VARIATIONAL METHODS