Published January 26, 2000 | Version v1
Journal article Metadata-only

Visualization of the region of Ar ion projected range under GaAs irradiation

Creators

  • 1. Fiziko-Tekhnicheskij Inst. im. A.F. Ioffe RAN, Sankt-Peterburg (Russian Federation)

Description

The results of the experimental study by means of a raster electron microscope on the GaAs sample fragment irradiated by the Ar ions accelerated up to the energy of 2.1, 4.6 and 8.4 MeV are presented. Visualization of the region of the ions range obtained in the experiment was used for determination of the ions projected range in the semiconductor

Abstract (Russian)

Приведены результаты экспериментального исследования с помощью растрового электронного микроскопа скола образца GaAs, облученного ионами Ar, ускоренными до энергии 2,1; 4,6 и 8,4 МэВ. Визуализация области пробега ионов, полученная в эксперименте, использована для определения проецированного пробега ионов в полупроводнике

Additional details

Additional titles

Original title (Russian)
Визуализация области проецированного пробега ионов Ар при облучении GaAs

Publishing Information

Journal Title
Pis'ma v Zhurnal Tekhnicheskoj Fiziki
Journal Volume
26
Journal Issue
2
Journal Page Range
p. 64-68
ISSN
0320-0116
CODEN
PZTFDD

INIS

Country of Publication
Russian Federation
Country of Input or Organization
Russian Federation
INIS RN
33016070
Subject category
S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
Descriptors DEI
ARGON IONS; ENERGY DEPENDENCE; GALLIUM ARSENIDES; IMAGES; IRRADIATION; MEV RANGE 01-10; PHYSICAL RADIATION EFFECTS; RANGE
Descriptors DEC
ARSENIC COMPOUNDS; ARSENIDES; CHARGED PARTICLES; ENERGY RANGE; GALLIUM COMPOUNDS; IONS; MEV RANGE; PNICTIDES; RADIATION EFFECTS

Optional Information

Notes
12 refs., 2 figs.