Defect structure of HgCdTe films grown by molecular beam epitaxy on Si substrates

An ion milling-assisted study of defect structure of HgCdTe films grown by molecular beam epitaxy on Si substrates was performed. The films appeared to contain initially neutral Te-related defects with concentration of 1017 cm−3, typical of HgCdTe. The concentration of residual donors was found to be quite low ((3–8) × 1014 cm−3). Specific to HgCdTe/Si technology appeared to be a considerable number of stacking faults, which affected the carrier mobility in n-type material. These defects can be annealed in He atmosphere at 230 °C, and after ion milling the electrical parameters of n-type HgCdTe/Si films approach those of high-quality bulk crystals. (paper)