Study of Defect-Layers Effect in Ferroelectric Thin Film with Transverse Ising Model
- 1. Center of Super-Diamond and Advanced Films (COSDAF) and Department of Physics and Materials Science, City University of Hong Kong (Hong Kong)
- 2. School of Physical Electronics, University of Electronic Science and Technology of China, Chengdu 610054 (China)
Description
By taking into account the two-spin interaction in the transverse Ising model (TIM), the influence of the defect layers (including JB and ΩB) on the polarization and Curie temperature are calculated numerically, within the framework of the decoupling approximation under Green's function. The numerical results show that the polarization and Curie temperature will both become large sensitively due to the large values of JB and the small value of ΩB of the defect layers. Meanwhile, the dependence of the crossover values of the exchange interaction JA, the transverse field ΩA of the bulk material on the exchange interaction JB and the transverse field ΩB of the defect layers are shown in 3-Dimensional (3-D) figures for the first time. Moreover, the transition features of the ferroelectric thin film with defect layers are presented. (general)
Availability note (English)
Available from http://dx.doi.org/10.1088/0253-6102/56/6/15Additional details
Identifiers
Publishing Information
- Journal Title
- Communications in Theoretical Physics
- Journal Volume
- 56
- Journal Issue
- 6
- Journal Page Range
- p. 1057-1062
- ISSN
- 0253-6102
INIS
- Country of Publication
- China
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 44004135
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Descriptors DEI
- APPROXIMATIONS; CRYSTAL DEFECTS; CURIE POINT; EXCHANGE INTERACTIONS; FERROELECTRIC MATERIALS; GREEN FUNCTION; ISING MODEL; LAYERS; POLARIZATION; SPIN; THIN FILMS; THREE-DIMENSIONAL CALCULATIONS
- Descriptors DEC
- ANGULAR MOMENTUM; CALCULATION METHODS; CRYSTAL MODELS; CRYSTAL STRUCTURE; DIELECTRIC MATERIALS; FILMS; FUNCTIONS; INTERACTIONS; MATERIALS; MATHEMATICAL MODELS; PARTICLE PROPERTIES; PHYSICAL PROPERTIES; THERMODYNAMIC PROPERTIES; TRANSITION TEMPERATURE