Published December 15, 2011 | Version v1
Journal article

Study of Defect-Layers Effect in Ferroelectric Thin Film with Transverse Ising Model

  • 1. Center of Super-Diamond and Advanced Films (COSDAF) and Department of Physics and Materials Science, City University of Hong Kong (Hong Kong)
  • 2. School of Physical Electronics, University of Electronic Science and Technology of China, Chengdu 610054 (China)

Description

By taking into account the two-spin interaction in the transverse Ising model (TIM), the influence of the defect layers (including JB and ΩB) on the polarization and Curie temperature are calculated numerically, within the framework of the decoupling approximation under Green's function. The numerical results show that the polarization and Curie temperature will both become large sensitively due to the large values of JB and the small value of ΩB of the defect layers. Meanwhile, the dependence of the crossover values of the exchange interaction JA, the transverse field ΩA of the bulk material on the exchange interaction JB and the transverse field ΩB of the defect layers are shown in 3-Dimensional (3-D) figures for the first time. Moreover, the transition features of the ferroelectric thin film with defect layers are presented. (general)

Availability note (English)

Available from http://dx.doi.org/10.1088/0253-6102/56/6/15

Additional details

Identifiers

Publishing Information

Journal Title
Communications in Theoretical Physics
Journal Volume
56
Journal Issue
6
Journal Page Range
p. 1057-1062
ISSN
0253-6102