Published October 1, 2003 | Version v1
Journal article

Crystallization and phase separation in Ge2+xSb2Te5 thin films

  • 1. STMicroelectronics, Central R and D, Via Olivetti 2, 20041 Agrate Brianza, MI (Italy)
  • 2. CNR-IMM Sezione di Catania, Stradale Primosole 50, 95121 Catania (Italy)
  • 3. Department of Physics and Astronomy, University of Catania, Via Santa Sofia 64, 95123 Catania (Italy)

Description

The electrical properties and the structure of isothermally annealed thin films of Ge2+xSb2Te5 (x=0 and 0.5) have been studied by in situ electrical measurements, x-ray diffraction, and transmission electron microscopy analyses. Phase separation has been observed in samples with an excess of Ge; by annealing amorphous Ge2.5Sb2Te5 films at temperatures in the range 130-160 deg. C, the material cannot be completely converted into the metastable face-centered-cubic (fcc) structure. At temperatures higher than 160 deg. C, the residual amorphous material may be converted into a fcc structure with a lower lattice parameter

Additional details

Identifiers

Publishing Information

Journal Title
Journal of Applied Physics
Journal Volume
94
Journal Issue
7
Journal Page Range
p. 4409-4413
ISSN
0021-8979
CODEN
JAPIAU

Optional Information

Notes
(c) 2003 American Institute of Physics.