Ion channeling measurements on germanium implanted and annealed silicon

The authors have prepared GexSi1-x/Si structures by implanting germanium into silicon left-angle 100 right-angle surfaces and thermally annealing. Implant energies were 100 and 150 keV and the total ion doses were between 1 and 10 x 1015 ions/cm2. Ion channeling studies of these structures indicates that after annealing, the germanium atoms substitute into the silicon lattice and create a pseudomorphic strained layer. In addition, channeling results suggest a residual band of dislocations at or beyond the ion range in the as-annealed samples