Published January 2005
| Version v1
Journal article
IR-spectroscopy analysis of the structure and composition of the Si-O phase in ultrathin (10-15 nm) SiO2 films
- 1. Institute of Semiconductor Physics, Kyiv (Ukraine)
- 2. Institute of Solid State Physics, Sofia (Bulgaria)
Description
The structural features of ultrathin (10-15 nm) SiO2 layers thermally grown at 850 degree C both on standard and hydrogen-plasma-treated Si wafers have been studied by IR-spectroscopy, spectral ellipsometry, and computer simulation. The analysis of IR spectra has shown that the structure of standard SiO2layers is characterized by the presence of SiO2Si2 molecular complexes and the relatively large concentration of strained 4-fold rings of SiO4 tetrahedra
Additional details
Publishing Information
- Journal Title
- Ukrayins'kij Fyizichnij Zhurnal (Kiev)
- Journal Volume
- 50
- Journal Issue
- no.1
- Journal Page Range
- p. 78-83
- ISSN
- 0372-400X
INIS
- Country of Publication
- Ukraine
- Country of Input or Organization
- Ukraine
- INIS RN
- 36092331
- Subject category
- S36: MATERIALS SCIENCE; S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Descriptors DEI
- CRYSTAL GROWTH METHODS; HYDROGENATION; INFRARED SPECTRA; LAYERS; OXIDATION; PHASE STUDIES; SILICON OXIDES; THIN FILMS
- Descriptors DEC
- CHALCOGENIDES; CHEMICAL REACTIONS; FILMS; OXIDES; OXYGEN COMPOUNDS; SILICON COMPOUNDS; SPECTRA