Published October 9, 2006 | Version v1
Journal article Metadata-only

Electrical characterization of defects introduced in n-type Ge during indium implantation

Creators

  • 1. Instituut voor Kern-en Stralingsfysica, Katholieke Universiteit Leuven, Celestijnenlaan 200D, 3001 Leuven (Belgium)
  • 2. Physics Department, University of Pretoria, Pretoria 0002 (South Africa)

Description

The authors have employed deep level transient spectroscopy to investigate the defects introduced in n-type Ge during 160 keV indium (In) ion implantation. Our results show that In implantation introduces three prominent electron traps with energy levels at EC-0.09 eV, EC-0.15 eV, and EC-0.30 eV, respectively. The authors have found that these defects are different from the point defects introduced by electron irradiation but that they do not involve In. Annealing at 600 deg. C removed all the defects introduced during In implantation but results in a single prominent defect with a level at EC-0.35 eV

Additional details

Identifiers

DOI
10.1063/1.2360922;

Publishing Information

Journal Title
Applied Physics Letters
Journal Volume
89
Journal Issue
15
Journal Page Range
p. 152123-152123.3
ISSN
0003-6951
CODEN
APPLAB

INIS

Country of Publication
United States
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
38023949
Subject category
S36: MATERIALS SCIENCE;
Descriptors DEI
ANNEALING; DEEP LEVEL TRANSIENT SPECTROSCOPY; ELECTRON BEAMS; ELECTRONS; GERMANIUM; INDIUM IONS; ION IMPLANTATION; IRRADIATION; KEV RANGE 100-1000; POINT DEFECTS; SEMICONDUCTOR MATERIALS; TRAPS
Descriptors DEC
BEAMS; CHARGED PARTICLES; CRYSTAL DEFECTS; CRYSTAL STRUCTURE; ELEMENTARY PARTICLES; ELEMENTS; ENERGY RANGE; FERMIONS; HEAT TREATMENTS; IONS; KEV RANGE; LEPTON BEAMS; LEPTONS; MATERIALS; METALS; PARTICLE BEAMS; SPECTROSCOPY

Optional Information

Notes
(c) 2006 American Institute of Physics