Published July 1, 2012 | Version v1
Journal article

Structural engineering of Ba0.5Sr0.5TiO3 epitaxial films

  • 1. Cultivation Base for State Key Laboratory, Qingdao University, No. 308 Ningxia Road, Qingdao, 266071 (China)
  • 2. College of Physical Science, Qingdao University, No. 308 Ningxia Road, Qingdao, 266071 (China)
  • 3. Department of Materials, Imperial College London, Exhibition Road, London, SW7 2AZ (United Kingdom)

Description

Ba0.5Sr0.5TiO3 single-layered and multilayered films were epitaxially grown on a (001) LaAlO3 substrate using single target and dual target pulsed laser deposition, respectively. Compared to the single-layered films, the multilayered films exhibited broader phase transition and improved thermo-stability. The microstructure of these epitaxial films was investigated using high-resolution transmission electron microscopy in details. Misfit and threading dislocations were observed in the single-layered film, while the threading dislocations were dramatically decreased and no misfit dislocations were found in the multilayered film. It is suspected that the difference in dislocation densities is responsible for the different behaviors of the permittivity with temperature. - Highlights: ► Microstructure of Ba0.5Sr0.5TiO3 single-layered and multilayered films. ► Dielectric properties of Ba0.5Sr0.5TiO3 single-layered and multilayered films. ► Critical thickness for the formation of misfit dislocations in the films.

Availability note (English)

Available from http://dx.doi.org/10.1016/j.tsf.2012.04.072

Additional details

Identifiers

DOI
10.1016/j.tsf.2012.04.072;
PII
S0040-6090(12)00533-0;

Publishing Information

Journal Title
Thin Solid Films
Journal Volume
520
Journal Issue
18
Journal Page Range
p. 5918-5921
ISSN
0040-6090
CODEN
THSFAP

Optional Information

Copyright
Copyright (c) 2012 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.