Published August 20, 2010 | Version v1
Journal article

Chemically synthesized metal-oxide-metal segmented nanowires with high ferroelectric response

  • 1. Department of Materials Science and Engineering, Center for Emergent Materials, Ohio State University, Columbus, OH 43210 (United States)
  • 2. Department of Chemical, Materials, and Biomolecular Engineering, Institute of Materials Science, University of Connecticut, Storrs, CT 06269 (United States)

Description

A chemical synthesis method is presented for the fabrication of high-definition segmented metal-oxide-metal (MOM) nanowires in two different ferroelectric oxide systems: Au-BaTiO3-Au and Au-PbTiO3-Au. This method entails electrodeposition of segmented nanowires of Au-TiO2-Au inside anodic aluminum oxide (AAO) templates, followed by topotactic hydrothermal conversion of the TiO2 segments into BaTiO3 or PbTiO3 segments. Two-terminal devices from individual MOM nanowires are fabricated, and their ferroelectric properties are measured directly, without the aid of scanning probe microscopy (SPM) methods. The MOM nanowire architecture provides high-quality end-on electrical contacts to the oxide segments, and allows direct measurement of properties of nanoscale volume, strain-free oxide segments. Unusually high ferroelectric responses, for chemically synthesized oxides, in these MOM nanowires are reported, and are attributed to the lack of residual strain in the oxides. The ability to measure directly the active properties of nanoscale volume, strain-free oxides afforded by the MOM nanowire architecture has important implications for fundamental studies of not only ferroelectric nanostructures but also nanostructures in the emerging field of multiferroics.

Availability note (English)

Available from http://dx.doi.org/10.1088/0957-4484/21/33/335601

Additional details

Identifiers

DOI
10.1088/0957-4484/21/33/335601;
PII
S0957-4484(10)49808-6;

Publishing Information

Journal Title
Nanotechnology (Print)
Journal Volume
21
Journal Issue
33
Journal Page Range
[7 p.]
ISSN
0957-4484