Published 2006 | Version v1
Journal article Metadata-only

An Influence of Gamma-Irradiation and 238U Fragments on Single-Crystal Silicon Properties

Creators

  • 1. NSC KIPT, Kharkov (Ukraine)
  • 2. Kharkov National University of Radioelectronics, Kharkov (Ukraine)

Description

In the paper the processes of accumulation of radiation defects, formed by fragments of 238U nucleus fission, for forming of amorphous phases in the bulk of single-crystal silicon and the influence of the temperature annealing of defects on the properties of disordered structures are investigated

Additional details

Publishing Information

Journal Title
Voprosy Atomnoj Nauki i Tekhniki
Journal Issue
no.3/47/
Journal Page Range
p. 179-181
ISSN
1562-6016

INIS

Country of Publication
Ukraine
Country of Input or Organization
Ukraine
INIS RN
38054273
Subject category
S36: MATERIALS SCIENCE;
Descriptors DEI
AMORPHOUS STATE; ANNEALING; ELECTRIC CONDUCTIVITY; FISSION FRAGMENTS; GAMMA RADIATION; LINEAR ACCELERATORS; MONOCRYSTALS; PHYSICAL RADIATION EFFECTS; SILICON; TEMPERATURE DEPENDENCE; URANIUM 238
Descriptors DEC
ACCELERATORS; ACTINIDE NUCLEI; ALPHA DECAY RADIOISOTOPES; CRYSTALS; ELECTRICAL PROPERTIES; ELECTROMAGNETIC RADIATION; ELEMENTS; EVEN-EVEN NUCLEI; HEAT TREATMENTS; HEAVY NUCLEI; IONIZING RADIATIONS; ISOTOPES; NUCLEAR FRAGMENTS; NUCLEI; PHYSICAL PROPERTIES; RADIATION EFFECTS; RADIATIONS; RADIOISOTOPES; SEMIMETALS; SPONTANEOUS FISSION RADIOISOTOPES; URANIUM ISOTOPES; YEARS LIVING RADIOISOTOPES