Published June 1977
| Version v1
Journal article
Photon emission studies of the synthesis of molecules by ion implantation
- 1. Stichting voor Fundamenteel Onderzoek der Materie, Amsterdam (Netherlands). Instituut voor Atoom en Molecuulfysica
Description
The purpose of this note is to comment on laboratory simulation of the synthesis of molecules by ion implantation and to estimate the minimum sputtering rate of molecules that can be measured by detecting photons. Optical emission during high dose nitrogen bombardment of high purity Si single crystals has been studied. Results are discussed. (U.K.)
Additional details
Identifiers
Publishing Information
- Journal Title
- Radiation Effects
- Journal Volume
- 33
- Journal Issue
- 1
- Series
- Radiat. Eff.
- Journal Page Range
- 57-58
- ISSN
- 0033-7579
INIS
- Country of Publication
- United Kingdom
- Country of Input or Organization
- United Kingdom
- INIS RN
- 8331343
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Descriptors DEI
- EMISSION; ION IMPLANTATION; MOLECULES; MONOCRYSTALS; NITROGEN IONS; ORIGIN; PHOTONS; SILICON; SIMULATION; SPUTTERING; SYNTHESIS
- Descriptors DEC
- CHARGED PARTICLES; CRYSTALS; ELEMENTARY PARTICLES; ELEMENTS; IONS; MASSLESS PARTICLES; SEMIMETALS
Optional Information
- Notes
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