A detailed study of the microstructure and thermal stability of typical SiC fibers
- 1. Center for High Resolution Electron Microscopy, College of Materials Science and Engineering, Hunan University, Changsha 410082 (China)
- 2. Science and Technology on Advanced Ceramic Fibers and Composites Laboratory, National University of Defense Technology, Changsha 410073 (China)
- 3. Pico Center, Materials Characterization and Preparation Center, Southern University of Science and Technology, Shenzhen 518055 (China)
Description
Highlights: • The cross-sectional microstructure and thermal stability of typical SiC fibers were characterized via SEM and TEM. • The SiC fiber with gradient microstructure has better properties than that with uniform microstructure. • The graphite exhibits straight planes on the fiber surface while they're turbostratic inside the fiber. Continuous SiC fibers have attracted increasing research interest for their significant application in aerospace and nuclear energy. Control of inhomogeneity and decrement of defects are crucial for improving the mechanical and high-temperature performance of SiC fibers. Thus an understanding of fine and detailed microstructural and microchemical distribution of SiC fibers is urgently needed. In the present work, the cross-sectional phase distributions, morphologies and defects of amorphous, non-stoichiometric and near-stoichiometric SiC fibers were well characterized. From surface to core, the amorphous and non-stoichiometric fibers exhibited uniform microstructures, but a gradient change along the radial direction was observed in the near-stoichiometric fiber. Nanosized SiC and turbostratic carbon (2–4 nm) were randomly distributed inside the amorphous fiber. A large amount of graphite surrounding SiC grains appears in the non-stoichiometric fiber which possess low strength and weak thermal stability. The near-stoichiometric fiber has transgranular fracturing, high strength and favorable thermal stability, and the graphite planes are turbostratic inside the fiber but straight on the surface. The results of both energy-dispersive X-ray spectrometry measurements and first-principles calculations demonstrate that Al atoms can occupy Si sites in the SiC grains. Our findings offer fine understanding for fabricating SiC fibers with superior properties.
Availability note (English)
Available from http://dx.doi.org/10.1016/j.matchar.2018.09.041Additional details
Identifiers
- DOI
- 10.1016/j.matchar.2018.09.041;
- PII
- S1044580318317923;
Publishing Information
- Journal Title
- Materials Characterization
- Journal Volume
- 146
- Journal Page Range
- p. 91-100
- ISSN
- 1044-5803
- CODEN
- MACHEX
INIS
- Country of Publication
- United States
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 53034715
- Subject category
- S77: NANOSCIENCE AND NANOTECHNOLOGY;
- Descriptors DEI
- ATOMS; DEFECTS; DISTRIBUTION; GRAPHITE; MICROSTRUCTURE; MORPHOLOGY; NANOSTRUCTURES; NUCLEAR ENERGY; SCANNING ELECTRON MICROSCOPY; SILICON CARBIDES; STOICHIOMETRY; SURFACES; TEMPERATURE RANGE 0400-1000 K; TRANSMISSION ELECTRON MICROSCOPY; X-RAY SPECTROSCOPY
- Descriptors DEC
- CARBIDES; CARBON; CARBON COMPOUNDS; ELECTRON MICROSCOPY; ELEMENTS; ENERGY; MICROSCOPY; MINERALS; NONMETALS; SILICON COMPOUNDS; SPECTROSCOPY; TEMPERATURE RANGE
Optional Information
- Copyright
- Copyright (c) 2018 Elsevier Inc. All rights reserved.