Electrical noise in field-effect transistors based on ZnO:Li films

The noise characteristics of field-effect transistors based on ZnO:Li films obtained by the diffuse technology are studied. The results of an experimental study of the noise characteristics of the drain current are presented, namely, the Random Telegraph Signal and the 1/f-noise. The spectral density of the drain current noises in the low-frequency range (10-5000 Hz) has a classical 1/f dependence. It was found that at low concentrations of the acceptor impurity, 1/f-noise is observed, and with an increase in the acceptor impurity concentration the Random Telegraph Signal prevails