Published January 1984
| Version v1
Journal article
Microwave ion source for high current metal beams
Creators
- 1. Hitachi Ltd., Kokubunji, Tokyo (Japan). Central Research Lab.
Description
A high current, metal ion source has been developed for application to materials modification in metals and insulators. In a microwave discharge type ion source, even highly reactive materials such as metal halides, as well as oxygen, can be used for source feed materials. The microwave ion source originally developed for conventional semiconductor fabrication has been modified to provide several mA of mass-separated metal ions. So far, ions of Al+, Ga+, Ti+ and Sc+ have been obtained. (author)
Additional details
Publishing Information
- Journal Title
- Vacuum
- Journal Volume
- 34
- Journal Issue
- 1-2
- Series
- Vacuum.
- Journal Page Range
- 245-249
- ISSN
- 0042-207X
Conference
- Title
- Proceedings of the 3. international conference on low energy ion beams.
- Dates
- 28-31 Mar 1983.
- Place
- Loughborough (UK).
INIS
- Country of Publication
- United Kingdom
- Country of Input or Organization
- United Kingdom
- INIS RN
- 15039676
- Subject category
- S74: ATOMIC AND MOLECULAR PHYSICS;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- ALUMINIUM IONS; CRYSTAL DOPING; ELECTRICAL INSULATORS; GALLIUM IONS; HAFNIUM IONS; ION BEAMS; ION IMPLANTATION; ION SOURCES; MICROWAVE RADIATION; MILLI AMP BEAM CURRENTS; SCANDIUM IONS; SEMICONDUCTOR MATERIALS; TITANIUM IONS
- Descriptors DEC
- ATOMIC IONS; BEAM CURRENTS; BEAMS; CHARGED PARTICLES; CURRENTS; ELECTRICAL EQUIPMENT; ELECTROMAGNETIC RADIATION; EQUIPMENT; IONS; MATERIALS; RADIATIONS