Published May 2001 | Version v1
Journal article

Ion beam synthesis of CoSi2: Influence of surface kinetics on nucleation

Description

The experimentally observed kinetics of CoSi2 precipitate nucleation in Si during Co implantation are compared with the predictions of an analytical model that includes the coupling between absorption/desorption of impurity atoms at the precipitate surface and impurity diffusion from the bulk. The comparison shows that in this system, precipitate nucleation deviates considerably from the thermodynamical form

Additional details

Identifiers

PII
S0168583X01005146;

Publishing Information

Journal Title
Nuclear Instruments and Methods in Physics Research. Section B, Beam Interactions with Materials and Atoms
Journal Volume
178
Journal Issue
1-4
Journal Page Range
p. 327-330
ISSN
0168-583X
CODEN
NIMBEU

INIS

Country of Publication
Netherlands
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
33063039
Subject category
S36: MATERIALS SCIENCE;
Descriptors DEI
ABSORPTION; COBALT SILICIDES; DESORPTION; IMPURITIES; ION BEAMS; ION IMPLANTATION; MATHEMATICAL MODELS; NUCLEATION; SURFACE PROPERTIES; SYNTHESIS; TRANSMISSION ELECTRON MICROSCOPY
Descriptors DEC
BEAMS; COBALT COMPOUNDS; ELECTRON MICROSCOPY; MICROSCOPY; SILICIDES; SILICON COMPOUNDS; SORPTION; TRANSITION ELEMENT COMPOUNDS

Optional Information

Copyright
Copyright (c) 2001 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.