Published February 15, 1988
| Version v1
Journal article
On the design of a JFET-CMOS front-end for low noise data acquisition from microstrip detectors
Creators
- 1. Max-Planck-Institut fuer Physik und Astrophysik, Muenchen (Germany, F.R.)
- 2. Istituto Nazionale di Fisica Nucleare, Milan (Italy)
- 3. Pavia Univ. (Italy). Ist. di Elettronica
- 4. Fraunhofer-Institut fuer Mikroelektronische Schaltungen und Systeme, Duisburg (Germany, F.R.)
Description
Design criteria of a monolithic front-end for a microstrip vertex detector are discussed. Two basic items are considered, a preamplifier combining junction field-effect transistors and complementary MOS and a sampled-data filter employing the switched capacitor approach. Investigation about the achievable noise performances and the accuracy limitations in the filter is carried out. (orig.)
Additional details
Publishing Information
- Journal Title
- Nucl. Instrum. Methods Phys. Res., Sect. A
- Journal Volume
- 264
- Journal Issue
- 2/3
- Series
- Nucl. Instrum. Methods Phys. Res., Sect. A.
- Journal Page Range
- 391-398
- ISSN
- 0168-9002
- CODEN
- NIMAE
INIS
- Country of Publication
- Netherlands
- Country of Input or Organization
- Netherlands
- INIS RN
- 19055855
- Subject category
- S46: INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY;
- Descriptors DEI
- ACCURACY; BACKGROUND NOISE; DATA ACQUISITION; INTEGRATED CIRCUITS; MOSFET; POSITION SENSITIVE DETECTORS; PREAMPLIFIERS; READOUT SYSTEMS; SEMICONDUCTOR DETECTORS
- Descriptors DEC
- AMPLIFIERS; ELECTRONIC CIRCUITS; ELECTRONIC EQUIPMENT; EQUIPMENT; FIELD EFFECT TRANSISTORS; MEASURING INSTRUMENTS; MOS TRANSISTORS; NOISE; RADIATION DETECTORS; SEMICONDUCTOR DEVICES; TRANSISTORS