The effect of bulk/surface defects ratio change on the photocatalysis of TiO2 nanosheet film
- 1. CAS Key Laboratory of Materials for Energy Conversion, Department of Materials Science and Engineering, University of Science and Technology of China, Hefei 230026 (China)
- 2. Department of Modern Physics, University of Science and Technology of China, Hefei 230026 (China)
- 3. State Key Laboratory of Particle Detection and Electronics, University of Science and Technology of China, Hefei 230026 (China)
- 4. National Synchrotron Radiation Laboratory, University of Science and Technology of China, Hefei 230026, Anhui (China)
- 5. Synergetic Innovation Center of Quantum Information & Stop Quantum Physics, University of Science and Technology of China, Hefei 230026 (China)
Description
Highlights: • The defect behaviors of TiO2 nanosheet array films were studied by positron annihilation spectroscopy. • Different bulk/surface defect ratios were realized by annealing at different temperature. • It was concluded that bulk defects are mainly Ti3+ vacancy defects. • The separation efficiency of photogenerated electrons and holes could be significantly improved by optimizing the bulk/surface defects ratio. - Abstract: The photocatalysis behavior of TiO2 nanosheet array films was studied, in which the ratio of bulk/surface defects were adjusted by annealing at different temperature. Combining positron annihilation spectroscopy, EPR and XPS, we concluded that the bulk defects belonged to Ti3+ related vacancy defects. The results show that the separation efficiency of photogenerated electrons and holes could be significantly improved by optimizing the bulk/surface defects ratio of TiO2 nanosheet films, and in turn enhancing the photocatalysis behaviors.
Availability note (English)
Available from http://dx.doi.org/10.1016/j.apsusc.2017.03.142Additional details
Identifiers
- DOI
- 10.1016/j.apsusc.2017.03.142;
- PII
- S0169-4332(17)30820-6;
Publishing Information
- Journal Title
- Applied Surface Science
- Journal Volume
- 410
- Journal Page Range
- p. 513-518
- ISSN
- 0169-4332
- CODEN
- ASUSEE
INIS
- Country of Publication
- Netherlands
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 48078204
- Subject category
- S77: NANOSCIENCE AND NANOTECHNOLOGY;
- Descriptors DEI
- ANNEALING; ANNIHILATION; DEFECTS; ELECTRON SPIN RESONANCE; ELECTRONS; FILMS; NANOSTRUCTURES; OXYGEN; PHOTOCATALYSIS; POSITRON ANNIHILATION SPECTROSCOPY; SHEETS; SURFACES; TITANIUM OXIDES; TWO-DIMENSIONAL SYSTEMS; VACANCIES; X-RAY PHOTOELECTRON SPECTROSCOPY
- Descriptors DEC
- CATALYSIS; CHALCOGENIDES; CRYSTAL DEFECTS; CRYSTAL LATTICES; CRYSTAL STRUCTURE; ELECTRON SPECTROSCOPY; ELEMENTARY PARTICLES; ELEMENTS; FERMIONS; HEAT TREATMENTS; INTERACTIONS; LEPTONS; MAGNETIC RESONANCE; NONMETALS; OXIDES; OXYGEN COMPOUNDS; PARTICLE INTERACTIONS; PHOTOELECTRON SPECTROSCOPY; POINT DEFECTS; RESONANCE; SPECTROSCOPY; TITANIUM COMPOUNDS; TRANSITION ELEMENT COMPOUNDS
Optional Information
- Copyright
- Copyright (c) 2017 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.