Published February 1996 | Version v1
Journal article Metadata-only

Determining the concentration of an isovalent impurity in epitaxial layers of indium phosphide

Creators

  • 1. Tashkent State University, 700095 Tashkent (Uzbekistan)

Description

The Bi concentration in the solid phase of InP grown by liquid-phase epitaxy is studied. X-ray microstructural analysis of the intensity of the characteristic radiation of Bi in the InP samples by comparison with the radiation of a standard sample made it possible to determine the Bi concentration. The lower test limit of InP doping by bismuth is found. The molar fraction of this test limit in this case is x=0.0015%

Additional details

Publishing Information

Journal Title
Semiconductors
Journal Volume
30
Journal Issue
2
Journal Page Range
p. 183-184
ISSN
1063-7826
CODEN
SMICES

INIS

Country of Publication
United States
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
35046603
Subject category
S36: MATERIALS SCIENCE; S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
Resource subtype / Literary indicator
Numerical Data, Translation
Descriptors DEI
BISMUTH; CRYSTAL DEFECTS; CRYSTAL DOPING; DOPED MATERIALS; EXPERIMENTAL DATA; INDIUM PHOSPHIDES; LIQUID PHASE EPITAXY; X-RAY DIFFRACTION
Descriptors DEC
COHERENT SCATTERING; CRYSTAL GROWTH METHODS; CRYSTAL STRUCTURE; DATA; DIFFRACTION; ELEMENTS; EPITAXY; INDIUM COMPOUNDS; INFORMATION; MATERIALS; METALS; NUMERICAL DATA; PHOSPHIDES; PHOSPHORUS COMPOUNDS; PNICTIDES; SCATTERING

Optional Information

Notes
Translated from Fizika i Tekhnika Poluprovodnikov, ISSN 0015-3222, 30, 331-334 (February 1996); (c) 1996 American Institute of Physics.